Integrated circuit device including air gaps and method of manufacturing the same
US11515201B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 12, 2020 |
| Grant date | Nov 29, 2022 |
| Priority date | — |
| Expiry date | Jul 16, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/482
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An integrated circuit device according to the inventive concepts includes lower wiring structures formed on a substrate, an air gap arranged between the lower wiring structures, a capping layer covering an upper surface of the air gap, an etch stop layer conformally covering an upper surfaces of the lower wiring structures and the capping layer and having a protrusion and recess structure, an insulating layer covering the etch stop layer, and an upper wiring structure penetrating the insulating layer and connected to the upper surface of the lower wiring structure not covered with the etch stop layer, wherein the upper wiring structure covers a portion of an upper surface of the capping layer, and a level of the upper surface of the capping layer is higher than a level of the upper surface of the lower wiring structures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.