Sanghoon Ahn
46Patents
6h-index
72Co-inventors
68Inventor score
Filing activity: Nov 4, 2011 → Nov 16, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9368362B2 | Semiconductor devices including a capping layer and methods of forming semiconductor devices including a capping layer | Electricity | 26 | Active |
| US9666525B2 | Three-dimensional semiconductor memory device | Electricity | 10 | Active |
| US8786058B2 | Semiconductor devices and methods of manufacturing the same | Electricity | 6 | Active |
| US10263238B2 | Battery protection circuit module package, battery pack and electronic device including same | Emerging Cross-Sectional Technologies | 6 | Active |
| US9953924B2 | Semiconductor devices including a capping layer | Electricity | 6 | Active |
| US9711453B2 | Semiconductor devices including a capping layer | Electricity | 6 | Active |
| US9524937B2 | Semiconductor devices and methods of fabricating the same | Electricity | 4 | Active |
| US9929099B2 | Planarized interlayer dielectric with air gap isolation | Electricity | 3 | Active |
| US9460922B1 | Laser annealing apparatus and a method for manufacturing a display apparatus using the laser annealing apparatus | Performing Operations; Transporting | 3 | Active |
| US11515201B2 | Integrated circuit device including air gaps and method of manufacturing the same | Electricity | 3 | Active |
| US9842803B2 | Semiconductor devices including gaps between conductive patterns | Electricity | 3 | Active |
| US9972528B2 | Semiconductor devices | Electricity | 3 | Active |
| US9337150B2 | Semiconductor devices including supporting patterns in gap regions between conductive patterns | Electricity | 3 | Active |
| US10269712B2 | Semiconductor devices including a capping layer | Electricity | 3 | Active |
| US11569128B2 | Semiconductor device | Electricity | 2 | Active |
| US9520300B2 | Semiconductor devices and methods of fabricating the same | Electricity | 2 | Active |
| US9633845B2 | Method of manufacturing a substrate having a crystallized layer and a laser crystallizing apparatus for the same | Emerging Cross-Sectional Technologies | 1 | Active |
| US11069613B2 | Integrated circuit device and method of manufacturing the same | Electricity | 1 | Active |
| US9387552B2 | Laser annealing apparatus and laser annealing method using the same | Performing Operations; Transporting | 1 | Active |
| US10566284B2 | Semiconductor device | Electricity | 1 | Active |
| US9969047B2 | Substrate polishing apparatus | Performing Operations; Transporting | 1 | Active |
| US10943824B2 | Semiconductor device and method of manufacturing the same | Electricity | 1 | Active |
| US9343409B2 | Semiconductor devices having staggered air gaps | Electricity | 1 | Active |
| US11823952B2 | Semiconductor device and method of manufacturing the same | Electricity | 0 | Active |
| US9911644B2 | Semiconductor devices and methods of fabricating the same | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.