Conductive structures for contacting a top electrode of an embedded memory device and methods of making such contact structures on an IC product
US11515205B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 30, 2019 |
| Grant date | Nov 29, 2022 |
| Priority date | — |
| Expiry date | Sep 8, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/692
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
One illustrative method disclosed herein includes forming at least one first layer of insulating material above an upper surface of a top electrode of a memory cell, forming a patterned etch stop layer above the at least one first layer of insulating material, wherein the patterned etch stop layer has an opening that is positioned vertically above at least a portion of the upper surface of the top electrode and forming at least one second layer of insulating material above an upper surface of the etch stop layer. The method also includes forming a conductive contact opening that extends through the etch stop layer to expose at least a portion of the upper surface of the top electrode and forming a conductive contact structure in the conductive contact opening, wherein the conductive contact structure is conductively coupled to the upper surface of the top electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.