Patent · US Active

One transistor two capacitors nonvolatile memory cell

US11515314B2 · kind B2 · utility

0Cited by
3References
19Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJun 4, 2020
Grant dateNov 29, 2022
Priority date
Expiry dateMar 10, 2041

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10B41/60

Abstract

A nonvolatile memory device is provided. The device comprises a memory transistor. A first capacitor is coupled to the memory transistor. A second capacitor is coupled to the memory transistor. The second capacitor comprises a first electrode and a second electrode. The first capacitor and the second capacitor are connected to separate input terminals.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.