3D floating-gate multiple-input device
US11515318B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 11, 2019 |
| Grant date | Nov 29, 2022 |
| Priority date | — |
| Expiry date | Mar 31, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/035
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A multiple input device is disclosed. The multiple input device includes a semiconductor structure extending in a first direction, a first dielectric material surrounding a portion of the semiconductor structure, a floating gate on the first dielectric material and surrounding the portion of the semiconductor structure, and a second dielectric material on the floating gate and surrounding the portion of the semiconductor structure. The multiple input device also includes a plurality of control gates on the second dielectric material. At least one of the control gates extends vertically away from the semiconductor structure in a second direction and at least one of the control gates extends vertically away from the semiconductor structure in a third direction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.