Semiconductor device structure having multiple gate terminals

US11515428B2 · kind B2 · utility

Assignee

• NAMLAB GGMBH · DE

Inventors

• Maik Simon · Passau, DE
• Jens Trommer · Dresden, DE
• Walter M. Weber · Laguna Hills, US
• Stefan Slesazeck · Dresden, DE

Key dates

• Filing date: Dec 23, 2020
• Grant date: Nov 29, 2022
• Expiry date: Mar 2, 2041

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/6739

Abstract

One example provides an integrated circuit comprising a transistor including a semiconductor channel. The semiconductor channel includes three or more sub-channels, one or more nodes, each node being a junction of at least three sub-channels, and channel ends. A Schottky contact at each channel end forms a source or drain contact, and a gate contact disposed at each Schottky contact controls a barrier conductivity of the corresponding Schottky contact.