Patent · US Active

Photoacoustic gas sensor and pressure sensor

US11519848B2 · kind B2 · utility

0Cited by

6References

12Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Johannes Manz · Munich, DE
Christoph Glacer · Munich, DE
David Tumpold · Tauberbischofsheim, DE

Key dates

Filing date	Jun 18, 2020
Grant date	Dec 6, 2022
Priority date	—
Expiry date	Nov 7, 2040

Classification

Technology area (CPC G)Physics
CPC primaryG01N2021/1704
WIPO fieldMeasurement
WIPO sectorInstruments

Abstract

A MEMS photoacoustic gas sensor includes a first membrane and a second membrane opposing the first membrane and spaced apart from the first membrane by a sensing volume. The MEMS photoacoustic gas sensor includes an electromagnetic source and communication with the sensing volume to deflect the first membrane and the second membrane.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.