Patent · US Active

Epitaxial oxide materials, structures, and devices

US11522103B1 · kind B1 · utility

14Cited by

17References

40Claims

0Family size

Assignee

Silanna UV Technologies Pte Ltd · SG

Inventor

Petar Atanackovic · Adelaide, AU

Key dates

Filing date	Feb 22, 2022
Grant date	Dec 6, 2022
Priority date	—
Expiry date	Feb 22, 2042

Classification

Technology area (CPC H)Electricity
CPC primaryH10D64/27
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

The present disclosure provides techniques for epitaxial oxide materials, structures and devices. In some embodiments, a semiconductor structure includes an epitaxial oxide heterostructure, comprising: a substrate; a first epitaxial oxide layer comprising (Nix1Mgy1Zn1−x1−yl)2GeO4 wherein 0≤x1≤1 and 0≤y1≤1; and a second epitaxial oxide layer comprising (Nix2Mgy2Zn1−x2−y2)2GeO4 wherein 0≤x2≤1 and 0≤y2≤1. In some cases, either: x1≠x2 and y1=y2; x1=x2 and y1≠y2; or x1≠x2 and y1≠y2. In some embodiments, a semiconductor structure includes an epitaxial oxide heterostructure, comprising: a substrate; a first epitaxial oxide layer comprising (Mgx1Zn1−x1)(Aly1Ga1−y1)2O4 wherein 0≤x1≤1 and 0≤y1≤1; and a second epitaxial oxide layer comprising (Nix2Mgy2Zn1−x2−y2)2GeO4 wherein 0≤x2≤1 and 0≤y2≤1.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.