Acoustic wave device including interdigital electrodes covered by silicon oxynitride film
US11522515B2 · kind B2 · utility
1Cited by
8References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 15, 2018 |
| Grant date | Dec 6, 2022 |
| Priority date | — |
| Expiry date | Oct 7, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H9/171
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
An acoustic wave device includes a piezoelectric substrate, a pair of interleaved interdigital transducer electrodes disposed on the piezoelectric substrate, and a dielectric film including silicon oxynitride covering the pair of interleaved interdigital transducer electrodes. The dielectric film exhibits a temperature coefficient of velocity of substantially zero throughout an operating temperature range of the acoustic wave device of between −55° C. and 125° C.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.