Method for characterizing fluctuation induced by single particle irradiation in a device and application thereof
US11525857B2 · kind B2 · utility
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7Claims
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Key dates
| Filing date | May 13, 2022 |
| Grant date | Dec 13, 2022 |
| Priority date | — |
| Expiry date | May 13, 2042 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06F2119/02
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method for characterizing a fluctuation induced by single particle irradiation in a device. A plurality of devices varying in size are tested respectively before and after irradiation to obtain threshold voltage distribution, such that a threshold voltage fluctuation induced by irradiation is obtained and used to correct a process fluctuation model, so as to correct a design margin of the devices working under the irradiation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.