Xia An
14Patents
2h-index
23Co-inventors
50Inventor score
Filing activity: Sep 25, 2010 → May 13, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8673722B2 | Strained channel field effect transistor and the method for fabricating the same | Electricity | 4 | Active |
| US8865543B2 | Ge-based NMOS device and method for fabricating the same | Electricity | 4 | Active |
| US9508852B2 | Radiation-hardened-by-design (RHBD) multi-gate device | Electricity | 2 | Active |
| US8450155B2 | Method for introducing channel stress and field effect transistor fabricated by the same | Electricity | 1 | Active |
| US9086448B2 | Method for predicting reliable lifetime of SOI mosfet device | Physics | 1 | Active |
| US8541847B2 | Semiconductor device and method for fabricating the same | Electricity | 1 | Active |
| US8632691B2 | Interface treatment method for germanium-based device | Electricity | 1 | Active |
| US9312126B2 | Method for processing gate dielectric layer deposited on germanium-based or group III-V compound-based substrate | Electricity | 0 | Active |
| US8722312B2 | Method for fabricating semiconductor nano circular ring | Performing Operations; Transporting | 0 | Active |
| US9484208B2 | Preparation method of a germanium-based schottky junction | Electricity | 0 | Active |
| US8652929B2 | CMOS device for reducing charge sharing effect and fabrication method thereof | Electricity | 0 | Active |
| US8877594B2 | CMOS device for reducing radiation-induced charge collection and method for fabricating the same | Electricity | 0 | Active |
| US11525857B2 | Method for characterizing fluctuation induced by single particle irradiation in a device and application thereof | Physics | 0 | Active |
| US9147597B2 | Method for isolating active regions in germanium-based MOS device | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.