Method of processing substrate, substrate processing apparatus, recording medium, and method of manufacturing semiconductor device
US11527402B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 28, 2020 |
| Grant date | Dec 13, 2022 |
| Priority date | — |
| Expiry date | Jan 28, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02208
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
There is provided a technique that includes: forming an oxide film containing a central atom X of a precursor on a substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: (a) forming a first layer containing a component in which a first group is bonded to the central atom X on the substrate by supplying the precursor having a molecular structure in which the first group and a second group are bonded to the central atom X and having a bonding energy between the first group and the central atom X that is higher than a bonding energy between the second group and the central atom X, to the substrate; and (b) forming a second layer containing the central atom X by supplying an oxidizing agent to the substrate to oxidize the first layer, wherein in (a), the precursor is supplied under a condition in which the second group is desorbed and the first group is not desorbed from the central atom X contained in the precursor and the central atom X is adsorbed on a surface of the substrate in a state where the second group is desorbed from the central atom X and the bonding of the first group and the central atom X is maintained.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.