Method of manufacturing a semiconductor device having a conductive field plate and a first well
US11527624B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 28, 2020 |
| Grant date | Dec 13, 2022 |
| Priority date | — |
| Expiry date | Jun 20, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/516
Abstract
A method of manufacturing a semiconductor device includes forming a gate structure over an active region of a substrate, the gate structure comprising a first section and a second section. The first section and the second section dividing the active region into a first source/drain region between the first section and the second section, and a pair of second source/drain regions arranged on opposite sides of the gate structure. The method further includes forming a conductive field plate over the substrate, the field plate extending between the first section and the second section and overlapping an edge of the active region. The method further includes implanting a first well in the substrate, wherein the first well overlaps the edge of the active region. The method further includes forming an isolation structure in the substrate, wherein the conductive field plate extends over the isolation structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.