Ferroelectric thin-film structures, methods of manufacturing the same, and electronic devices including the ferroelectric thin-film structures
US11527635B2 · kind B2 · utility
1Cited by
0References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 2, 2020 |
| Grant date | Dec 13, 2022 |
| Priority date | — |
| Expiry date | Jul 17, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/701
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A ferroelectric thin-film structure includes at least one first atomic layer and at least one second atomic layer. The first atomic layer includes a first dielectric material that is based on an oxide, and the second atomic layer includes both the first dielectric material and a dopant that has a bandgap greater than a bandgap of the dielectric material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.