Domain switching devices and methods of manufacturing the same
US11527646B2 · kind B2 · utility
3Cited by
2References
26Claims
0Family size
Assignee
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Key dates
| Filing date | Sep 21, 2020 |
| Grant date | Dec 13, 2022 |
| Priority date | — |
| Expiry date | Sep 21, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/685
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A domain switching device includes a channel region, a source region and a drain region connected to the channel region, a gate electrode isolated from contact with the channel region, an anti-ferroelectric layer between the channel region and the gate electrode, a conductive layer between the gate electrode and the anti-ferroelectric layer to contact the anti-ferroelectric layer, and a barrier layer between the anti-ferroelectric layer and the channel region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.