Photon avalanche diode and methods of producing thereof
US11527670B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Feb 13, 2020 |
| Grant date | Dec 13, 2022 |
| Priority date | — |
| Expiry date | Jan 7, 2041 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01J2001/4466
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A photon avalanche diode includes a semiconductor body having a first side and a second side opposite the first side, a primary doped region of a first conductivity type at the first side of the semiconductor body, a primary doped region of a second conductivity type opposite the first conductivity type at the second side of the semiconductor body, an enhancement region of the second conductivity type below and adjoining the primary doped region of the first conductivity type, the enhancement region forming an active pn-junction with the primary doped region of the first conductivity type, and a collection region of the first conductivity type interposed between the enhancement region and the primary doped region of the second conductivity type and configured to transport a photocarrier generated in the collection region or the primary doped region of the second conductivity type towards the enhancement region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.