Henning Feick
39Patents
6h-index
59Co-inventors
72Inventor score
Filing activity: Mar 29, 2002 → Jan 9, 2024
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6882051B2 | Nanowires, nanostructures and devices fabricated therefrom | Emerging Cross-Sectional Technologies | 392 | Expired |
| US6996147B2 | Methods of fabricating nanostructures and nanowires and devices fabricated therefrom | Emerging Cross-Sectional Technologies | 248 | Expired |
| US7569941B2 | Methods of fabricating nanostructures and nanowires and devices fabricated therefrom | Emerging Cross-Sectional Technologies | 54 | Active |
| US7569847B2 | Methods of fabricating nanostructures and nanowires and devices fabricated therefrom | Emerging Cross-Sectional Technologies | 10 | Expired |
| US8809952B2 | Lateral transistor component and method for producing same | Electricity | 7 | Active |
| US9166039B2 | Lateral transistor component and method for producing same | Electricity | 6 | Active |
| US7834264B2 | Methods of fabricating nanostructures and nanowires and devices fabricated therefrom | Emerging Cross-Sectional Technologies | 5 | Active |
| US10276494B2 | One time programmable memory cell and memory array | Physics | 2 | Active |
| US9905715B2 | Controlling of photo-generated charge carriers | Physics | 1 | Active |
| US9202815B1 | Method for processing a carrier, a carrier, and a split gate field effect transistor structure | Electricity | 1 | Active |
| US10541261B2 | Optical sensor device having a depleted doping region adjacent to a control electrode and method for manufacturing the optical sensor device | Physics | 1 | Active |
| US11527670B2 | Photon avalanche diode and methods of producing thereof | Physics | 1 | Active |
| US10008621B2 | Controlling of photo-generated charge carriers | Physics | 1 | Active |
| US11245002B2 | Superjunction transistor arrangement and method of producing thereof | Electricity | 1 | Active |
| US9704913B2 | Manufacturing of an imager device and imager device | Physics | 1 | Active |
| US10545225B2 | Optical sensor device with deep and shallow control electrodes | Electricity | 1 | Active |
| US9613812B2 | Method for processing a carrier, a carrier, an electronic device and a lithographic mask | Emerging Cross-Sectional Technologies | 0 | Active |
| US9478555B2 | Method for processing a carrier, a carrier, and a split gate field effect transistor structure | Electricity | 0 | Active |
| US11869919B2 | Method for manufacturing a sensor device with a buried deep trench structure and sensor device | Electricity | 0 | Active |
| US10804354B2 | Radio frequency resistor element | Electricity | 0 | Active |
| US9882600B2 | Switching device, a communication device, and a method for processing a carrier | Electricity | 0 | Active |
| US11948802B2 | Methods and devices related to radio frequency devices | Electricity | 0 | Active |
| US9984917B2 | Semiconductor device with an interconnect and a method for manufacturing thereof | Electricity | 0 | Active |
| US10329140B2 | Semiconductor device, pressure sensor, microphone, and acceleration sensor | Performing Operations; Transporting | 0 | Active |
| US12057517B2 | Photon avalanche diode having first, second, and third diodes formed in a semiconductor body | Physics | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.