Method, device and system for providing etched metallization structures

US11528811B2 · kind B2 · utility

Assignee

• Intel Corporation · US

Inventors

• Jeremy Ecton · Gilbert, US
• Nicholas S. Haehn · Scottsdale, US
• Oscar Ojeda · Chandler, US
• Arnab Roy · Chandler, US
• Timothy A. White · Greer, US
• Suddhasattwa Nad · Chandler, US
• Hsin-Wei Wang · Chandler, US

Key dates

• Filing date: Jun 1, 2021
• Grant date: Dec 13, 2022
• Expiry date: Jun 24, 2041

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2224/16225
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Techniques and mechanisms for providing anisotropic etching of a metallization layer of a substrate. In an embodiment, the metallization layer includes grains of a conductor, wherein a first average grain size and a second average grain size correspond, respectively, to a first sub-layer and a second sub-layer of the metallization layer. The first sub-layer and the second sub-layer each span at least 5% of a thickness of the metallization layer. A difference between the first average grain size and the second average grain size is at least 10% of the first average grain size. In another embodiment, a first condition of metallization processing contributes to grains of the first sub-layer being relatively large, wherein an alternative condition of metallization processing contributes to grains of the second sub-layer being relatively small. A grain size gradient across a thickness of the metallization layer facilitates etching processes being anisotropic.