Optical waveguide apparatus and method of fabrication thereof
US11531159B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 25, 2021 |
| Grant date | Dec 20, 2022 |
| Priority date | — |
| Expiry date | Mar 25, 2041 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F1/0151
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor structure according to the present disclosure includes a buried oxide layer, a first dielectric layer disposed over the buried oxide layer, a first waveguide feature disposed in the first dielectric layer, a second dielectric layer disposed over the first dielectric layer and the first waveguide feature, a third dielectric layer disposed over the second dielectric layer, and a second waveguide feature disposed in the second dielectric layer and the third dielectric layer. The second waveguide feature is disposed over the first waveguide feature and a portion of the second waveguide feature vertically overlaps a portion of the first waveguide feature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.