Cut metal gate refill with void
US11532479B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 1, 2020 |
| Grant date | Dec 20, 2022 |
| Priority date | — |
| Expiry date | Sep 1, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/10
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A gate stack can be etched to form a trench extending through the gate stack, the trench removing a portion of the gate stack to separate the gate stack into a first gate stack portion and a second gate stack portion. A dielectric material is deposited in the trench to form a dielectric region, the dielectric region having an air gap in the dielectric material. The air gap may extend upward from beneath the gate stack to an area interposed between the end of the first gate stack portion and the end of the second gate stack portion. Contacts to the first gate stack portion and contacts to the second gate stack portion may be formed which are electrically isolated from each other by the dielectric material and air gap formed therein.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.