Metallization barrier structures for bonded integrated circuit interfaces

US11532558B2 · kind B2 · utility

Assignee

• Intel Corporation · US

Inventors

• Carl Naylor · Portland, US
• Mauro J. Kobrinsky · Portland, US
• Richard Vreeland · Beaverton, US
• Ramanan V. Chebiam · Hillsboro, US
• William Brezinski · Beaverton, US
• Brennen Mueller · Portland, US
• Jeffery D. Bielefeld · Forest Grove, US

Key dates

• Filing date: Sep 27, 2019
• Grant date: Dec 20, 2022
• Expiry date: Sep 27, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2225/06524
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Composite integrated circuit (IC) device structures that include two components coupled through a hybrid bonded composite interconnect structure. The two components may be two different monolithic IC structures (e.g., chips) that are bonded over substantially planar dielectric and metallization interfaces. Composite interconnect metallization features formed at a bond interface may be doped with a metal or chalcogenide dopant. The dopant may migrate to a periphery of the composite interconnect structure and form a barrier material that will then limit outdiffusion of a metal, such as copper, into adjacent dielectric material.