Patent · US Active

Source/drain contact structure

US11532627B2 · kind B2 · utility

3Cited by
10References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateNov 9, 2020
Grant dateDec 20, 2022
Priority date—
Expiry dateNov 9, 2040

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D84/83
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A semiconductor device according to the present disclosure includes a first interconnect structure, a first transistor over the first interconnect structure, a second transistor over the first transistor, and a second interconnect structure over the second transistor. The first transistor includes first nanostructures and a first source region adjoining the first nanostructures. The second transistor includes second nanostructures and a second source region adjoining the second nanostructures. The first source region is coupled to a first power rail in the first interconnect structure, and the second source region is coupled to a second power rail in the second interconnect structure.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.