Inventor · Zhubei City, TW

Hou-Yu Chen

102Patents
9h-index
70Co-inventors
83Inventor score

Filing activity: Dec 10, 2001 → Jan 2, 2024

Most-cited inventions

PatentTitleAreaCited byStatus
US6518105B1 High performance PD SOI tunneling-biased MOSFET Emerging Cross-Sectional Technologies 130 Expired
US9171925B2 Multi-gate devices with replaced-channels and methods for forming the same Electricity 37 Active
US9607838B1 Enhanced channel strain to reduce contact resistance in NMOS FET devices Electricity 20 Active
US7244640B2 Method for fabricating a body contact in a Finfet structure and a device including the same Electricity 19 Expired
US8659032B2 FinFET and method of fabricating the same Electricity 19 Active
US9000536B2 Fin field effect transistor having a highly doped region Electricity 15 Active
US7943986B2 Method for fabricating a body contact in a finfet structure and a device including the same Electricity 11 Active
US9425313B1 Semiconductor device and manufacturing method thereof Electricity 10 Active
US9252271B2 Semiconductor device and method of making Electricity 9 Active
US11239208B2 Packaged semiconductor devices including backside power rails and methods of forming the same Electricity 7 Active
US9941368B2 Raised epitaxial LDD in MuGFETs and methods for forming the same Electricity 6 Active
US7187000B2 High performance tunneling-biased MOSFET and a process for its manufacture Electricity 5 Expired
US10056383B2 Enhanced channel strain to reduce contact resistance in NMOS FET devices Electricity 5 Active
US9166053B2 FinFET device including a stepped profile structure Electricity 4 Active
US9515167B2 Raised epitaxial LDD in MuGFETs and methods for forming the same Electricity 4 Active
US10515966B2 Enhanced channel strain to reduce contact resistance in NMOS FET devices Electricity 4 Active
US9166044B2 Raised epitaxial LDD in MuGFETs Electricity 4 Active
US11502168B2 Tuning threshold voltage in nanosheet transitor devices Performing Operations; Transporting 4 Active
US11710667B2 Gate-all-around device with trimmed channel and dipoled dielectric layer and methods of forming the same Electricity 3 Active
US11664374B2 Backside interconnect structures for semiconductor devices and methods of forming the same Electricity 3 Active
US9634104B2 FinFET and method of fabricating the same Electricity 3 Active
US9053934B2 Finfet and method of fabricating the same Electricity 3 Active
US10014223B2 Multi-gate devices with replaced-channels and methods for forming the same Electricity 3 Active
US11532627B2 Source/drain contact structure Electricity 3 Active
US9653581B2 Semiconductor device and method of making Electricity 3 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.