Method of fabricating array substrate, array substrate, and display apparatus

US11532679B2 · kind B2 · utility

Assignees

• MIANYANG BOE OPTOELECTRONICS TECHNOLOGY CO., LTD. · CN
• BOE Technology Group Co., Ltd. · CN

Inventors

• Zhu Chen · Pequest, US
• Kwiyoung Yun · Beijing, CN
• Xin Cao · Shanghai, CN
• Hongcan Liu · Beijing, CN
• Ming-Ji Dai · Hsinchu, TW
• Haifeng Xu · San Diego, US
• Haoyuan FAN · Beijing, CN

Key dates

• Filing date: Apr 15, 2019
• Grant date: Dec 20, 2022
• Expiry date: Jan 10, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10K59/1201

Abstract

A method of fabricating an array substrate is provided. The method includes forming a plurality of first thin film transistors on a base substrate, a respective one of the plurality of first thin film transistors formed to include a first active layer, a first gate electrode, a first source electrode and a first drain electrode; and forming a plurality of second thin film transistors on the base substrate, a respective one of the plurality of second thin film transistors formed to include a second active layer, a second gate electrode, a second source electrode and a second drain electrode. Forming the first source electrode includes forming a first source sub-layer and forming a second source sub-layer in separate patterning steps. Forming the first drain electrode includes forming a first drain sub-layer and forming a second drain sub-layer in separate patterning steps.