Method for growing a transition metal dichalcogenide layer, transition metal dichalcogenide growth device, and method for forming a semiconductor device
US11538682B2 · kind B2 · utility
1Cited by
2References
20Claims
0Family size
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Key dates
| Filing date | Oct 16, 2018 |
| Grant date | Dec 27, 2022 |
| Priority date | — |
| Expiry date | Dec 7, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/811
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for growing a transition metal dichalcogenide layer involves arranging a substrate having a first transition metal contained pad is arranged in a chemical vapor deposition chamber. A chalcogen contained precursor is arranged upstream of the substrate in the chemical vapor deposition chamber. The chemical vapor deposition chamber is heated for a period of time during which a transition metal dichalcogenides layer, containing transition metal from the first transition metal contained pad and chalcogen from the chalcogen contained precursor, is formed in an area adjacent to the first transition metal contained pad.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.