Patent · US Active

Multi-zone plasma-enhanced chemical vapor deposition apparatus and methods for operating the same

US11538708B2 · kind B2 · utility

0Cited by
1References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMay 6, 2020
Grant dateDec 27, 2022
Priority date
Expiry dateFeb 18, 2041

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01J2237/18
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

An apparatus includes an electrostatic chuck and located within a vacuum enclosure. A plurality of conductive plates can be embedded in the electrostatic chuck, and a plurality of plate bias circuits can be configured to independently electrically bias a respective one of the plurality of conductive plates. Alternatively or additionally, a plurality of spot lamp zones including a respective set of spot lamps can be provided between a bottom portion of the vacuum enclosure and a backside surface of the electrostatic chuck. The plurality of conductive plates and/or the plurality of spot lamp zones can be employed to locally modify chucking force and to provide local temperature control.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.