Method for forming stressor, semiconductor device having stressor, and method for forming the same
US11538938B2 · kind B2 · utility
0Cited by
11References
20Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Dec 23, 2019 |
| Grant date | Dec 27, 2022 |
| Priority date | — |
| Expiry date | Dec 23, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/85
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a semiconductor fin protruding from a substrate, a gate electrode over the semiconductor fin, a gate insulating layer between the semiconductor fin and the gate electrode, source and drain regions disposed on opposite sides of the semiconductor fin, a first stressor formed in a region between the source and drain regions. The first stressor including one material selected from the group consisting of He, Ne, and Ga.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.