Patent · US Active

Method of manufacturing a power semiconductor system

US11539291B2 · kind B2 · utility

0Cited by

7References

6Claims

0Family size

Assignee

Infineon Technologies Austria AG · AT

Inventors

Petteri Palm · Regensburg, DE
Frank Daeche · Unterhaching, DE
Zeeshan Umar · Munich, DE
Andrew N. Sawle · Petworth, GB
Maciej Wojnowski · Munich, DE
Xaver Schloegel · Sachsenkam, DE
Josef Hoeglauer · Munich, DE

Key dates

Filing date	Oct 20, 2020
Grant date	Dec 27, 2022
Priority date	—
Expiry date	Oct 20, 2040

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10T29/4913
WIPO fieldElectrical machinery, apparatus, energy
WIPO sectorElectrical engineering

Abstract

A method of manufacturing a power semiconductor system includes providing a power module having one or more power transistor dies and attaching an inductor module to the power module such that the inductor module is electrically connected to a node of the power module. The inductor module includes a substrate with a magnetic material and windings at one or more sides of the substrate. Further methods of manufacturing power semiconductor systems and methods of manufacturing inductor modules are also described.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.