Machine learning based inverse optical proximity correction and process model calibration
US11544440B2 · kind B2 · utility
4Cited by
6References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 23, 2019 |
| Grant date | Jan 3, 2023 |
| Priority date | — |
| Expiry date | May 23, 2039 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06F2119/18
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method for calibrating a process model and training an inverse process model of a patterning process. The training method includes obtaining a first patterning device pattern from simulation of an inverse lithographic process that predicts a patterning device pattern based on a wafer target layout, receiving wafer data corresponding to a wafer exposed using the first patterning device pattern, and training an inverse process model configured to predict a second patterning device pattern using the wafer data related to the exposed wafer and the first patterning device pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.