Manufacturing method of a semiconductor device with efficient edge structure
US11545362B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 29, 2021 |
| Grant date | Jan 3, 2023 |
| Priority date | — |
| Expiry date | Jul 9, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8325
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A manufacturing method of an electronic device includes: forming a drift layer of an N type; forming a trench in the drift layer; forming an edge-termination structure alongside the trench by implanting dopant species of a P type; and forming a depression region between the trench and the edge-termination structure by digging the drift layer. The steps of forming the depression region and the trench are carried out at the same time. The step of forming the depression region comprises patterning the drift layer to form a structural connection with the edge-termination structure having a first slope, and the step of forming the trench comprises etching the drift layer to define side walls of the trench, which have a second slope steeper than the first slope.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.