Phosphorus fugitive emission control
US11545368B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 19, 2021 |
| Grant date | Jan 3, 2023 |
| Priority date | — |
| Expiry date | Aug 19, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/26513
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of processing and passivating an implanted workpiece is disclosed, wherein, after passivation, the fugitive emissions of the workpiece are reduced to acceptably low levels. This may be especially beneficial when phosphorus, arsine, germane or another toxic species is the dopant being implanted into the workpiece. In one embodiment, a sputtering process is performed after the implantation process. This sputtering process is used to sputter the dopant at the surface of the workpiece, effectively lowering the dopant concentration at the top surface of the workpiece. In another embodiment, a chemical etching process is performed to lower the dopant concentration at the top surface. After this sputtering or chemical etching process, a traditional passivation process can be performed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.