Semiconductor component having through-silicon vias
US11545392B2 · kind B2 · utility
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59References
20Claims
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Assignee
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Key dates
| Filing date | Sep 15, 2020 |
| Grant date | Jan 3, 2023 |
| Priority date | — |
| Expiry date | Oct 20, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor component includes a substrate having an opening. The semiconductor component further includes a first dielectric liner in the opening, wherein the first dielectric liner having a thickness T1 at a first end of the opening, and a thickness T2 at a second end of the opening, and R1 is a ratio of T1 to T2. The semiconductor component further includes a second dielectric liner over the first dielectric liner, wherein the second dielectric liner having a thickness T3 at the first end of the opening, a thickness T4 at the second end of the opening, R2 is a ratio of T3 to T4, and R1 is greater than R2.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.