Integrated circuit device and semiconductor package including the same
US11545417B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 29, 2021 |
| Grant date | Jan 3, 2023 |
| Priority date | — |
| Expiry date | Jan 30, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/351
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An integrated circuit device includes a semiconductor substrate, first through-silicon-via (TSV) structures penetrating a first region of the semiconductor substrate and spaced apart from each other by a first pitch, a first individual device between the first TSV structures and spaced apart from the first TSV structures by a distance that is greater than a first keep-off distance, and second TSV structures penetrating a second region of the semiconductor substrate and spaced apart from each other by a second pitch that is less than the first pitch. The second region of the semiconductor device does not include an individual device that is homogeneous with the first individual device and between the second TSV structures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.