Image sensor having improved full well capacity and related method of formation
US11545513B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 1, 2021 |
| Grant date | Jan 3, 2023 |
| Priority date | — |
| Expiry date | Mar 1, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8063
Abstract
In some embodiments, a method is provided. The method includes forming a plurality of trenches in a semiconductor substrate, where the trenches extend into the semiconductor substrate from a back-side of the semiconductor substrate. An epitaxial layer comprising a dopant is formed on lower surfaces of the trenches, sidewalls of the trenches, and the back-side of the semiconductor substrate, where the dopant has a first doping type. The dopant is driven into the semiconductor substrate to form a first doped region having the first doping type along the epitaxial layer, where the first doped region separates a second doped region having a second doping type opposite the first doping type from the sidewalls of the trenches and from the back-side of the semiconductor substrate. A dielectric layer is formed over the back-side of the semiconductor substrate, where the dielectric layer fill the trenches to form back-side deep trench isolation structures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.