Group III-nitride Schottky diode

US11545586B2 · kind B2 · utility

Assignee

• Intel Corporation · US

Inventors

• Harald Gossner · Riemerling, DE
• Peter Baumgartner · Munich, DE
• Uwe Hodel · Munich, DE
• Domagoj Siprak · Munich, DE
• Stephan Leuschner · Lübeck, DE
• Richard Geiger · Munich, DE
• Han Wui Then · Portland, US
• Marko Radosavljevic · Portland, US
• Sansaptak Dasgupta · Hillsboro, US

Key dates

• Filing date: Sep 29, 2017
• Grant date: Jan 3, 2023
• Expiry date: Sep 29, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/64

Abstract

A Group III-Nitride (III-N) device structure is provided which comprises: a heterostructure having three or more layers comprising III-N material, an anode within a recess that extends through two or more of the layers, wherein the anode is in electrical contact with the first layer, a cathode comprising donor dopants, wherein the cathode is on the first layer of the heterostructure; and a conducting region in the first layer in direct contact to the cathode and conductively connected to the anode. Other embodiments are also disclosed and claimed.