Method and device for failure analysis using RF-based thermometry
US11551956B2 · kind B2 · utility
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2References
20Claims
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Key dates
| Filing date | Jun 25, 2020 |
| Grant date | Jan 10, 2023 |
| Priority date | — |
| Expiry date | Jun 22, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/20
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
According to the various examples, a fully integrated system and method for failure analysis using RF-based thermometry enable the detection and location of defects and failures in complex semiconductor packaging architectures. The system provides synchronous amplified RF signals to generate unique thermal signatures at defect locations based on dielectric relaxation loss and heating.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.