Patent · US Active

Substrate comprising a high-density interconnect portion embedded in a core layer

US11552015B2 · kind B2 · utility

0Cited by

0References

20Claims

0Family size

Assignee

QUALCOMM Incorporated · US

Inventors

Aniket PATIL · Tempe, US
Hong Bok We · San Diego, US
Kuiwon Kang · San Diego, US

Key dates

Filing date	Jun 12, 2020
Grant date	Jan 10, 2023
Priority date	—
Expiry date	Jun 15, 2040

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2224/821
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A substrate that includes a core layer comprising a first surface and a second surface, a plurality of core interconnects located in the core layer, a high-density interconnect portion located in the core layer, a first dielectric layer coupled to the first surface of the core layer, a first plurality of interconnects located in the first dielectric layer, a second dielectric layer coupled to the second surface of the core layer, and a second plurality of interconnects located in the second dielectric layer. The high-density interconnect portion includes a first redistribution dielectric layer and a first plurality of high-density interconnects located in the first redistribution dielectric layer. The high-density interconnect portion may provide high-density interconnects.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.