Patent · US Active

Method of manufacturing an optoelectronic device comprising a plurality of diodes and an electronic circuit for controlling these diodes

US11552125B2 · kind B2 · utility

0Cited by

4References

15Claims

0Family size

Assignee

COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

Perrine Batude · Dijon, FR
Hubert Bono · Grenoble, FR

Key dates

Filing date	Dec 18, 2019
Grant date	Jan 10, 2023
Priority date	—
Expiry date	Dec 18, 2039

Classification

Technology area (CPC H)Electricity
CPC primaryH10H20/857
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method of manufacturing an optoelectronic device, including the steps of: a) providing an active diode stack comprising a first doped semiconductor layer of a first conductivity type and a second doped semiconductor layer of the first conductivity type, coating the upper surface of the first layer; b) arranging a third semiconductor layer on the upper surface of the active stack; c) after step b), forming at least one MOS transistor inside and on top of the third semiconductor layer; and d) after step b), before or after step c), forming trenches vertically extending from the upper surface of the third layer and emerging into or onto the upper surface of the first layer and delimiting a plurality of pixels, each including a diode and an elementary diode control cell.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.