Compound semiconductor and method for producing the same
US11552174B2 · kind B2 · utility
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3Claims
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Key dates
| Filing date | Sep 14, 2018 |
| Grant date | Jan 10, 2023 |
| Priority date | — |
| Expiry date | Jan 10, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/1237
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Provided is a cadmium zinc telluride (CdZnTe) single crystal including a main surface that has a high mobility lifetime product (μτ product) in a wide range, wherein the main surface has an area of 100 mm2 or more and has 50% or more of regions where the μτ product is 1.0×10−3 cm2/V or more based on the entire main surface, and a method for effectively producing the same.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.