Integrated circuit devices and methods of manufacturing the same
US11552176B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 25, 2021 |
| Grant date | Jan 10, 2023 |
| Priority date | — |
| Expiry date | Jul 15, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/822
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An integrated circuit device includes a fin-type active area that extends on a substrate in a first direction, a gate structure that extends on the substrate in a second direction and crosses the fin-type active area, source/drain areas arranged on first and second sides of the gate structure, and a contact structure electrically connected to the source/drain areas. The source/drain areas comprise a plurality of merged source/drain structures. Each source/drain area comprises a plurality of first points respectively located on an upper surface of the source/drain area at a center of each source/drain structure, and each source/drain area comprises at least one second point respectively located on the upper surface of the source/drain area where side surfaces of adjacent source/drain structures merge with one another. A bottom surface of the contact structure is non-uniform and corresponds to the first and second points.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.