Patent · US Active

High-voltage devices integrated on semiconductor-on-insulator substrate

US11552192B2 · kind B2 · utility

1Cited by

1References

10Claims

0Family size

Assignee

GlobalFoundries Dresden Module One Limited Liability Company & Co. KG · DE

Inventors

Ruchil Kumar Jain · Singapore, SG
Alban Zaka · Dresden, DE

Key dates

Filing date	May 17, 2020
Grant date	Jan 10, 2023
Priority date	—
Expiry date	Oct 29, 2040

Classification

Technology area (CPC H)Electricity
CPC primaryH10D62/393
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

The present disclosure generally to semiconductor devices, and more particularly to semiconductor devices having high-voltage transistors integrated on a semiconductor-on-insulator substrate and methods of forming the same. The present disclosure provides a semiconductor device including a bulk substrate, a semiconductor layer above the bulk substrate, an insulating layer between the semiconductor layer and the bulk substrate, a source region and a drain region on the bulk substrate, a gate dielectric between the source region and the drain region, the gate dielectric having a first portion on the bulk substrate and a second portion on the semiconductor layer, and a gate electrode above the gate dielectric.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.