Semi-polar III-nitride optoelectronic devices on m-plane substrates with miscuts less than +/− 15 degrees in the c-direction

US11552452B2 · kind B2 · utility

Assignee

• The Regents of the University of California · US

Inventors

• Po Shan Hsu · Arcadia, US
• Kathryn M. Kelchner · Portland, US
• Robert M. Farrell · Goleta, US
• Daniel Arthur Haeger · Fremont, US
• Hiroaki Ohta · Wako, JP
• Anurag Tyagi · Kirkland, US
• Shuji Nakamura · Goleta, US
• Steven P. DenBaars · Goleta, US
• James S. Speck · Fremont, US

Key dates

• Filing date: Jan 26, 2018
• Grant date: Jan 10, 2023
• Expiry date: Jan 26, 2038

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02E10/544
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

An optoelectronic device grown on a miscut of GaN, wherein the miscut comprises a semi-polar GaN crystal plane (of the GaN) miscut x degrees from an m-plane of the GaN and in a c-direction of the GaN, where −15<x<−1 and 1<x<15 degrees.