Substrate processing apparatus and method of manufacturing semiconductor device
US11555246B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 30, 2021 |
| Grant date | Jan 17, 2023 |
| Priority date | — |
| Expiry date | Apr 30, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/683
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Described herein is a technique capable of suppressing a deviation in a thickness of a film formed on a substrate. According to one aspect of the technique of the present disclosure, a substrate processing apparatus includes a substrate retainer capable of supporting substrates; a cylindrical process chamber including a discharge part and supply holes; partition parts arranged in the circumferential direction to partition supply chambers communicating with the process chamber through the supply holes; nozzles provided with an ejection hole; and gas supply pipes. The supply chambers includes a first nozzle chamber and a second nozzle chamber, the process gas includes a source gas and an assist gas, the nozzles includes a first nozzle for the assist gas flows and a second nozzle disposed in the second nozzle chamber and through which the source gas flows, and the first nozzle is disposed adjacent to the second nozzle.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.