Aluminum nitride crystals having low urbach energy and high transparency to deep-ultraviolet wavelengths
US11555256B2 · kind B2 · utility
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23Claims
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Key dates
| Filing date | Jun 18, 2019 |
| Grant date | Jan 17, 2023 |
| Priority date | — |
| Expiry date | Jul 15, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/815
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
In various embodiments, single-crystal aluminum nitride boules and substrates have low Urbach energies and/or absorption coefficients at deep-ultraviolet wavelengths. The single-crystal aluminum nitride may function as a platform for the fabrication of light-emitting devices such as light-emitting diodes and lasers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.