High accurate contact resistance measurement method using one or more diodes

US11555844B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Ralf Arnold · Aalen, DE
• Lukas Niedergriese · Sauggart, DE

Key dates

• Filing date: Jun 29, 2018
• Grant date: Jan 17, 2023
• Expiry date: Aug 19, 2040

Classification

• Technology area (CPC G): Physics
• CPC primary: G01R31/275
• WIPO field: Measurement
• WIPO sector: Instruments

Abstract

A method for determining an emission coefficient of a device under test (DUT) using a test circuit comprises coupling a parameter measurement circuit associated with the test circuit to an input pin associated with the DUT, wherein the input pin is coupled to a diode element within the DUT and performing voltage and current measurements associated with the input pin using the parameter measurement circuit. In some embodiments, the method further comprises determining a plurality of contact resistance values respectively based on the voltage and current measurements and an emission coefficient estimate using a contact resistance estimation circuit; and determining an emission coefficient associated with the DUT based on the determined plurality of contact resistance values using an emission coefficient determination circuit.