Using mask fabrication models in correction of lithographic masks
US11556052B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 4, 2020 |
| Grant date | Jan 17, 2023 |
| Priority date | — |
| Expiry date | Jan 29, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0337
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A lithography process is described by a design for a lithographic mask and a description of the lithography configuration, which may include the lithography source, collection/illumination optics, projection optics, resist, and/or subsequent fabrication steps. The actual lithography process uses a lithographic mask fabricated from the mask design, which may be different than the nominal mask design. A mask fabrication model models the process for fabricating the lithographic mask from the mask design. Typically, this is an electron-beam (e-beam) process, which includes e-beam exposure of resist on a mask blank, processing of the exposed resist to form patterned resist, and etching of the mask blank with the patterned resist. The mask fabrication model, usually in conjunction with other process models, is used to estimate a result of the lithography process. Mask correction is then applied to the mask design based on the simulation result.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.