Semiconductor device structure having protection caps on conductive lines
US11557508B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 14, 2020 |
| Grant date | Jan 17, 2023 |
| Priority date | — |
| Expiry date | Aug 14, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/163
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device structure is provided. The semiconductor device structure includes a first conductive line over a substrate. The semiconductor device structure includes a first protection cap over the first conductive line. The semiconductor device structure includes a first photosensitive dielectric layer over the substrate, the first conductive line, and the first protection cap. The semiconductor device structure includes a conductive via structure passing through the first photosensitive dielectric layer and connected to the first protection cap. The semiconductor device structure includes a second conductive line over the conductive via structure and the first photosensitive dielectric layer. The semiconductor device structure includes a second protection cap over the second conductive line. The semiconductor device structure includes a second photosensitive dielectric layer over the first photosensitive dielectric layer, the second conductive line, and the second protection cap.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.