CMP slurry composition for polishing tungsten pattern wafer and method of polishing tungsten pattern wafer using the same
US11560495B2 · kind B2 · utility
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9Claims
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Key dates
| Filing date | Jan 22, 2021 |
| Grant date | Jan 24, 2023 |
| Priority date | — |
| Expiry date | Jan 22, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3213
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
A CMP slurry composition for polishing a tungsten pattern wafer and a method of polishing a tungsten pattern wafer, the composition including a solvent, the solvent including a polar solvent or a non-polar solvent; an abrasive agent; and an oxidizing agent, wherein the abrasive agent includes silica modified with an amino silane that includes three nitrogen atoms.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.