Sensor package

US11565933B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Michael Kandler · Birkenfeld, DE
• Alfred Niklas · Poing, DE

Key dates

• Filing date: Jul 31, 2018
• Grant date: Jan 31, 2023
• Expiry date: Apr 14, 2039

Classification

• Technology area (CPC B): Performing Operations; Transporting
• CPC primary: B81B2201/0264
• WIPO field: Micro-structural and nano-technology
• WIPO sector: Chemistry

Abstract

A sensor device may include a base layer, and an ASIC element disposed on the base layer. The ASIC element may include a plurality of electrical contact points. The sensor device may include a MEMS element. The MEMS element may include a plurality of through-silicon vias. The sensor device may include a plurality of conductive contact elements. Each conductive contact element may be disposed between, and electrically coupling, a respective through-silicon via and a respective electrical contact point. The sensor device may include a protective layer disposed between the ASIC element and the MEMS element. The protective layer may be composed of material(s) having a physical property defined to permit the protective layer to mitigate stress forces directed from the ASIC element to the MEMS element, to prevent corrosion, and/or to prevent leakage current between electrical connections due to pollution and/or humidity.