Silicon carbide ingot, wafer, method for producing a silicon carbide ingot, and method for manufacturing a wafer
US11566344B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Mar 5, 2021 |
| Grant date | Jan 31, 2023 |
| Priority date | — |
| Expiry date | Oct 6, 2041 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B33/00
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A wafer having relaxation moduli different by 450 GPa or less, as determined by dynamic mechanical analysis, when loaded to 1 N and 18 N with a loading rate of 0.1 N/min at a temperature of 25° C.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.